Hard X-ray Photoelectron Spectroscopy (HAXPES) by Joseph C. Woicik

Hard X-ray Photoelectron Spectroscopy (HAXPES) by Joseph C. Woicik

Author:Joseph C. Woicik
Language: eng
Format: epub
Publisher: Springer International Publishing, Cham

Fig. 12.14O 1s HAXPES/XSW results of the valence band of a 3.5-nm GdBCO film on NdGaO3(001). a The photoelectron spectrum of the GdBCO valence band region including the Gd 4f photoelectron lines. b The XSW data (symbols) and best fits to the data (lines) of the GdBCO valence band (hashed area) for the NdGaO3(004) reflection. Figure taken from [56]

The comparable large mean-free paths of the photoelectrons permitted in addition the analysis of the signal of the Nd and Ga atoms near the buried interface below the 3.5-nm film. The measurements suggested an essentially bulk-terminated NdGaO3 (NGO) surface. Combined with the information from the GBCO, the X-ray standing wave results revealed an interface with the CuO plane attached to the NdO plane, with a Cu-Nd distance of 0.18 nm.8 The XSW results also showed that the 3.5 nm GBCO film had grown pseudomorphically strained on the NGO surface whereas the thicker, 17.5-nm film, was found to be already partially relaxed. Interestingly enough, for YBa2Cu3O7−δ on SrTiO3(001), it had been found that the superconductor binds with the BaO plane to the TiO2 plane of the substrate [57] (Fig. 12.15).

Fig. 12.15Growth of YBa2Cu3O7−δ on SrTiO3(001). Left hand A photograph of the PLD process and the 5 × 10 mm substrates with YBa2Cu3O7−δ films. Right hand An STM image and cross section taken from [59]


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